深圳市太航半导体有限公司

XC3S50A-4VQG100C

For years, bi-polar semiconductors have been the conventional choice where electrically controllable switches were needed, such as in power conversion and motor drive applications. But that trend has seen changes, first to metal-oxide-semiconductor field-effect transistors (MOSFETs), and now to Gallium Nitride (GaN) and Silicon Carbide (SiC) devices. Both GaN and SiC devices, such as insulated-gate bipolar transistors (IGBTs) with their optimal thermal performance and high switching capabilities, are ideal for high-voltage and high-power switching applications (Figure 1).

XC3S50A-4VQG100C

XC3S50A-4VQG100C