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H26M11001AAR 海力士 原装现货欢迎询价
新年份
H26M11001AAR
HYNIX(海力士)
BGA
具体数量请QQ或电话联系
相关产品
产品信息
FEATURES
Technology:
55nm TSMC Embedded Flash (Flash + SRAM) process technology
Packaging:
Low cost and small package sizes
Multiple device densities with compatible package footprints for seamless migration between different device densities
RoHS6-compliant
Core Architecture:
H26M11001AAR
H26M11001AAR
H26M11001AAR
4-input look-up table (LUT) and single register Logic Element (LE)
LEs arranged in Logic Array Block (LAB)
Embedded RAM and user flash memory
Clocks and PLLs
Embedded multiplier blocks
General purpose I/Os
Internal Memory Blocks:
M9K — 9-kilobits (Kb) memory blocks
Cascadable blocks to create RAM, dual port, and FIFO functions
User Flash Memory:
User accessible non-volatile storage
High speed operating frequency
Large memory size
High data retention
Multiple interface option
Embedded Hard IP Embedded Multiplier Blocks:
Support for one 18 x 18 or two 9 x 9 multiplier modes
Cascadable blocks enabling creation of filters, arithmetic functions, and image processing pipelines
ADC:
12-bits successive approximation register (SAR) type
Up to 17 analog inputs
Cumulative speed up to 1 million samples per second (MSPS)
Integrated temperature sensing capability