深圳市太航半导体有限公司

FEATURES

Technology:

55nm TSMC Embedded Flash (Flash + SRAM) process technology

Packaging:

Low cost and small package sizes

Multiple device densities with compatible package footprints for seamless migration between different device densities

RoHS6-compliant

Core Architecture:

4-input look-up table (LUT) and single register Logic Element (LE)

LEs arranged in Logic Array Block (LAB)

Embedded RAM and user flash memory

Clocks and PLLs

Embedded multiplier blocks

General purpose I/Os

Internal Memory Blocks:

M9K — 9-kilobits (Kb) memory blocks

Cascadable blocks to create RAM, dual port, and FIFO functions

User Flash Memory:

User accessible non-volatile storage

High speed operating frequency

Large memory size

High data retention

Multiple interface option

Embedded Hard IP Embedded Multiplier Blocks:

Support for one 18 x 18 or two 9 x 9 multiplier modes

Cascadable blocks enabling creation of filters, arithmetic functions, and image processing pipelines

ADC:

12-bits successive approximation register (SAR) type

Up to 17 analog inputs

Cumulative speed up to 1 million samples per second (MSPS)

Integrated temperature sensing capability

数据速率: 3.125 Gb/s  

系列: Arria V GX  

商标: Intel / Altera  

分布式RAM: 12973 kbit  

内嵌式块RAM - EBR: 1173 kbit  

工作频率: 1.05 GHz  

湿度敏感性: Yes  

收发器数量: 9 Transceiver  

产品类型: FPGA - Field Programmable Gate Array  

工厂包装数量: 27  

子类别: Programmable Logic ICs  

总内存: 12973 kbit

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